Influence of High-k Oxide Thickness on Gate Stack DMG Junctionless SOI MOSFET

Mrinmoy Goswami,Ankush Chattopadhyay,Chayanika Bose

2021 Devices for Integrated Circuit (DevIC)（2021）

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摘要

The present paper describes the influence of Gate stacking on Dual Material (DM) Junctionless (JL) SOI MOSFET operating in Junction Accumulation Mode(JAM). The performance of the proposed MOSFET structure, simulated with 2D ATLAS device simulator, is investigated for variations in thickness of the high-k (HfO2) Gate oxide. The analog performance of the DMG JL JAM SOI MOSFET is examined on the basi...

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关键词

Performance evaluation,MOSFET,Simulation,Cutoff frequency,Logic gates,Capacitance,Hafnium compounds

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