Comparison of Short Circuit Robustness and Failure Mechanisms of GaN/SiC Cascode Devices and SiC Power MOSFETs

Comparative short circuit (SC) study is conducted on 650-V GaN/SiC cascode devices and mainstream SiC MOSFETs. The cascode devices deliver competitive SC capability and exhibit drain-to-source failure in the local areas without the source pad in the JFET, where the maximum temperature is located according to 3D thermal simulation results. The improvement of SC capability can be realized by adjusti...