Mitigation of Space-Charge-Modulation in 800-V JFET for HV Start-up Circuit Toward High ON-BV Performance
2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)(2021)
Abstract
In this work, a high-voltage (HV) junction field effect transistor (JFET) with voltage class extended to 800 V is proposed, which obtains a satisfactory on-state breakdown voltage (ON-BV) performance. For the traditional HV JFET, ON-BV is much lower than OFF-BV, which cannot meet the requirement for the application of high voltage start-up circuit. In pursuit of a high ON-BV and making it close to...
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Key words
Resistance,Performance evaluation,Modulation,High-voltage techniques,Logic gates,JFETs,Power semiconductor devices
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