The FinFET effect in Silicon Carbide MOSFETs

In ISPSD 2020 it has been shown that the effective mobility of a lateral 4H-SiC MOSFET could be increased by an order of magnitude through using an ultra-narrow-body design. Thus, this work presents further experimental results on a wide set of fin widths, ranging from conventional (860nm) to ultra-narrow (35nm). Furthermore, a 3D TCAD model, employing quantum corrections, is matched to experiment...