A Bootstrap Voltage Clamping Circuit for Dynamic V TH Characterization in Schottky-Type p-GaN Gate Power HEMT

A multi-functional bootstrap voltage clamping circuit is proposed for characterizing the drain-bias-induced dynamic VTH, in which the GaN HEMT serves as the key bootstrapping device. This new testing setup covers a wide range of OFF-state drain bias (VDSQ) up to the voltage rating of GaN power HEMT, a short OFF-to-ON (or stress-to-sense) delay (Tdelay) of 60ns, a high switching frequency (fsw) up ...