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Avalanche Capability of 650-V Normally-off GaN/SiC Cascode Power Device

Kailun Zhong,Jiahui Sun,Yuru Wang,Gang Lyu,Sirui Feng,Tao Chen,Kevin J. Chen

2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD)（2021）

Cited 5|Views3
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Abstract
A 650-V/84-mΩ normally-off GaN/SiC cascode power device has been developed using a high-voltage (HV) D-mode SiC JFET and a low-voltage (LV) E-mode GaN HEMT. The single-pulse avalanche capability of the GaN-HEMT/SiC-JFET cascode device is investigated using an unclamped inductive switching (UIS) testing setup. A Zener diode in parallel with the LV GaN HEMT is used to eliminate the voltage spikes at...
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Low voltage,Silicon carbide,Switches,HEMTs,Logic gates,Avalanche breakdown,JFETs
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