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First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal Gates.

Chen Li,Huilong Zhu,Yongkui Zhang, Qi Wang,Xiaogen Yin,Junjie Li,Guilei Wang,Zhenzhen Kong,Xuezheng Ai,Lu Xie,Yongbo Liu,Yangyang Li,Weixing Huang,Zijin Yan,Zhongrui Xiao,Henry H. Radamson,Junfeng Li,Wenwu Wang

Nano Letters（2021）

Cited 22|Views33
Key words
vertical gate-all-around field-effect-transistor (vGAAFET),self-aligned mental gate,replaced metal gate (RMG),universal process,nanowire/nanosheet
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