A 60 GHz High Gain Narrow-Band 150 nm InGaAs based Power Amplifier

The feasibility of inductorless two-stage common-source power amplifier (PA) based on 150nmInGaAs pHEMT devices is evaluated for narrow-band applications at $\sim$60GHz. The PA uses carefully sized and shorted microstrip transmission lines in place of inductors for mm-wave operation. It achieves a maximum gain of 18 dB, an operating 3-dB bandwidth of 2.5 GHz at 62 GHz center frequency with a fract...