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A Local Computing Cell and 6T SRAM-Based Computing-in-Memory Macro With 8-b MAC Operation for Edge AI Chips

Xin Si,Yung-Ning Tu,Wei-Hsing Huang,Jian-Wei Su,Pei-Jung Lu,Jing-Hong Wang,Ta-Wei Liu,Ssu-Yen Wu,Ruhui Liu,Yen-Chi Chou,Yen-Lin Chung,William Shih,Chung-Chuan Lo,Ren-Shuo Liu,Chih-Cheng Hsieh,Kea-Tiong Tang,Nan-Chun Lien,Wei-Chiang Shih,Yajuan He,Qiang Li,Meng-Fan Chang

IEEE Journal of Solid-State Circuits（2021）

Cited 48|Views43
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Abstract
This article presents a computing-in-memory (CIM) structure aimed at improving the energy efficiency of edge devices running multi-bit multiply-and-accumulate (MAC) operations. The proposed scheme includes a 6T SRAM-based CIM (SRAM-CIM) macro capable of: 1) weight-bitwise MAC (WbwMAC) operations to expand the sensing margin and improve the readout accuracy for high-precision MAC operations; 2) a c...
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SRAM cells,Common Information Model (computing),Computer architecture,Transistors,Software,Neural networks,Microprocessors
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