Logic implementation based on double memristors

In-memory computing based on memristor has attracted significant interest in order to break the von Neumann computer architecture's data-transfer bottleneck and develop high-efficient computing systems. Memristor-based logic gate is one of the potential ways to achieve these goals. Recently, there are many methods which have been presented to achieve Boolean functions, such as material implication (IMP). IMP logic gate consists of two parallel memristors, which can achieve IMP logic operation by applying appropriate voltages to memristors. With the help of IMP logic gate's structure, we could achieve many other Boolean functions by applying different voltages. We deduce the formulas which represent the relationships between applied voltages and memristors' resistances based on IMP logic gate's structure for achieving other Boolean functions. And according to these formulas, we design the schemes of applying voltages and demonstrate these designs with SPICE simulation. In addition to this, the new structure which consists of two anti-parallel memristors is taken into consideration. Similarly, based on it, we deduce the formulas and design the schemes of applying voltages and demonstrate these with SPICE simulation.