Examination of characteristic parameters of Zn/n-Si junction depending on electron radiation applied at different doses

In this work, we have studied the electrical characteristics of Zn/n-Si/Au-Sb Schottky diodes before and after different doses (25, 50 and 75 Gray) of electron-irradiation at room temperature. The ohmic contact has been made on n-Si crystal with Au-Sb alloy. The rectifier contact was sputtered Zinc metal on n-Si by using DC magnetron sputtering. The I–V measurements of these diodes performed by the use of a KEITLEY 487 Picoammeter/Voltage Source and the C–V measurements were performed with HP 4192A (50–13 MHz) LF Impedance Analyzer at room temperature and in dark. Experimental results showed that the values of the ideality factor obtained from I to V measurements increased and the values of the barrier height obtained from I to V and C–V measurements decreased after electron-irradiation.