Simulation Of Enhancement-Mode Recessed-Gate P-Channel Hfets Based On Polarization-Induced Doping And An Ingan/Gan/Algan Heterostructure

In this work, p-type polarization-induced doping (PID) recessed-gate p-channel InGaN/GaN/AlGaN heterostructure field-effect transistors (HFETs) are proposed. It is found that the current density of the device can be increased by introducing an InGaN/GaN/AlGaN heterojunction and p-type PID. The simulation results show that the current density can apparently be increased (from 3.42 mA mm(-1) to 7.31 mA mm(-1)) due to the increased hole concentration introduced by the InGaN/GaN/AlGaN heterojunction and the p-type PID. Different threshold voltages can be obtained by adjusting the GaN channel thickness, and normally-off p-channel HFETs with a negative V (TH) of -1 V were produced when a 6 nm GaN channel thickness was retained. These results may provide some reference information for the design of E-mode high-performance p-channel GaN devices.