Omni -Directional Transistors: Enabling Tensile -Force -Resilient Operation for Flexible Circuits and Systems
2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)(2021)
摘要
Thin-film transistors suffer from mechanical strain, which limits their performance in wearable systems. This paper proposes an IGZO-based omni-directional transistor (OT), whose force-insensitive axis can be aligned to the direction of the external force by dynamically adjusting the voltage on the top gates. As a result, the strain-induced variation on mobility and threshold voltage can be significantly attenuated. Based on the proposed OTs, a ring oscillator (RO) is designed and simulated by applying tensile force in different directions. The OT-based ring oscillator can achieve less than 1% frequency variation under a 0.4% induced strain, which is 12x lower compared with the conventional transistors.
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关键词
thin-fihn transistors, flexible circuits, mechanical strain, strain-effect compensation.
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