Investigations on Spectral Photon Radiation Sources to Perform TID Experiments in Micro- and Nano-Electronic Devices

Marc Gaillardin,Damien Lambert,Damien Aubert,Melanie Raine,Claude Marcandella,Gilles Assaillit, Gerard Auriel,Martial Martinez,Olivier Duhamel,Maxime Ribiere,Neil Rostand,Thierry Lagutere,Philippe Paillet,Christophe Delbos,David Poujols, Sandra Ritter

IEEE Transactions on Nuclear Science（2021）

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摘要

The total ionizing dose (TID) sensitivity of mature and innovative technologies is investigated using both ionizing radiation experiments and Monte-Carlo simulations to discuss the potential of spectral photon radiation sources as an alternative for radiation effects studies. The impact of both technological and radiation test parameters on effective TID deposition is also discussed. All the layers struck by the incident radiation flux before reaching the targeted sensitive oxide are the major contributors of final ionizing dose deposits, rather than the actual sensitive oxide itself.

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关键词

ARACOR,back-end-of-line (BEOL),backside irradiation,Bremsstrahlung,bulk,CMOS,device packaging,dosimeters,front-end-of-line (FEOL),frontside irradiation,gamma,GAMRAY,LINAC,linear accelerator,metal–oxide–semiconductor field effect transistor (MOSFET),ORIATRON,radiation laboratory sources,silicon,silicon-on-insulator (SOI),SiO₂,total ionizing dose (TID),X-rays

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