Annihilation and Regeneration of Defects in (112̅2) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth
Crystal Growth & Design(2021)
摘要
Semipolar III-nitrides have attracted great attention due to their weak polarization field for optoelectronic devices. High-quality AlN is a perfect template in the epitaxial growth of AlGaN-based ...
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