A Comprehensive Oxide-Based ReRAM TCAD Model with Experimental Verification
2021 IEEE International Memory Workshop (IMW)（2021）
Abstract
During the last few years, oxide-based ReRAM technology has attracted intense industrial and scientific research interest. Therefore, we have performed an in-depth computational study with a focus on data retention besides the resistive switching and the current run-away. Our newly developed comprehensive TCAD (Technology Computer Aided Design) model provides deep insight into the underlying micro...
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Key words
Heating systems,Electron traps,Catalysts,Computational modeling,Predictive models,Tunneling,Data models
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