Hot Electron Source Side Injection Comprehension in 40nm eSTM™

Franck Melul,Thibault Kempf,Vincenzo della Marca,Marc Bocquet,Madjid Akbal,Frederique Trenteseaux,Marc Mantelli,Arnaud Regnier,Stephan Niel,Francesco la Rosa

2021 IEEE International Memory Workshop (IMW)（2021）

引用 3|浏览2

暂无评分

摘要

In this paper, we detail an experimental study of the hot electron Source Side Injection programming operation of the embedded Select in Trench Memory (eSTM™) cell. A complete set of electrical characterizations is carried out. A focus on the Select Gate bias to improve the programming window and the consumption is reported. Moreover, the impact of the Sense-to-Select distance, on the memory behav...

查看译文

关键词

Degradation,Energy consumption,Current measurement,Conferences,Programming,Logic gates,Electron sources

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要