Integration scheme for 3D NAND with nonreplacement word line and its cell characteristics investigation
2021 IEEE International Memory Workshop (IMW)(2021)
摘要
We demonstrate an integration scheme for a 3D NAND memory cell with non-replacement word line (WL) by investigating the cell characteristics, including program, erase, retention, and interference based on our in-house process and device flow of 3D NAND memory arrays. The non-replacement WL is called WL-First in which P+ polysilicon is implemented as the gate material. We investigate the figures of...
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关键词
Three-dimensional displays,Conferences,Metals,Interference,Logic gates
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