Understanding the memory window in 1T-FeFET memories: a depolarization field perspective

K. Kaczmarek,M. Garcia Bardon,Y. Xiang,L. Breuil,N. Ronchi,B. Parvais,G. Groeseneken,J. van Houdt

2021 IEEE International Memory Workshop (IMW)（2021）

引用 6|浏览3

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摘要

We present a physics-based prediction of the progressive VTH shift on fabricated Si:HfO2-FeFETs during Incremental Step Pulse Programming, with the help of our in-house, hardware-validated FeFET compact model. Our study confirms that the depolarization field across the FE layer strongly constrains the retained polarization in the gate stack after the programming waveform stops, which constitutes a...

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关键词

Sensitivity,Limiting,Conferences,Programming,Predictive models,Logic gates,Iron

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