First Study of P-Channel Vertical Split-Gate Flash Memory Device with Various Electron and Hole Injection Methods and Potential Future Possibility to Enable Functional Memory Circuits

Cheng-Lin Sung,Hang-Ting Lue,Wei-Chen Chen,Tzu-Hsuan Hsu,Keh-Chung Wang,Chih-Yuan Lu

2021 IEEE International Memory Workshop (IMW)（2021）

引用 1|浏览4

暂无评分

摘要

Recently, we have developed a novel vertical split-gate Flash (or vertical 2T NOR) architecture in a n-channel device. In this work, we further develop the p-channel device counterpart, and demonstrate 4 different electron and hole injection methods, including band-to-band tunneling-induced hot-electron (BBHE), +FN electron, source-side injection hot-hole (SSIH), and-FN hole injections. The split-...

查看译文

关键词

Degradation,Electric potential,Field programmable analog arrays,Charge carrier processes,Split gate flash memory cells,Hot carriers,Transistors

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要