CMOS-compatible GaN HEMT on 200mm Si-substrate for RF application

In this work, we successfully fabricated AlGaN/GaN HEMT on 8-inch GaN-on-Si wafer utilizing CMOS BEOL compatible process, and demonstrate an AlGaN/GaN HEMT with Lg = 250nm reaching ft/fmax = 50/44 GHz. By semi-automatic RF measurements mapping in complete 8-inch wafer area, results exhibit average ft = 48GHz with NU = 7.6% and average fmax = 42GHz with NU = 5%, revealing the outstanding uniformity...