Circuit reliability prediction: challenges and solutions for the device time-dependent variability characterization roadblock

M. Nafria,J. Diaz-Fortuny,P. Saraza-Canflanca,J. Martin-Martinez,E. Roca,R. Castro-Lopez,R. Rodriguez,P. Martin-Lloret,A. Toro-Frias,D. Mateo, E. Barajas,X. Aragones,F. V. Fernandez

2021 IEEE Latin America Electron Devices Conference (LAEDC)（2021）

引用 0|浏览9

暂无评分

摘要

The characterization of the MOSFET Time-Dependent Variability (TDV) can be a showstopper for reliability-aware circuit design in advanced CMOS nodes. In this work, a complete MOSFET characterization flow is presented, in the context of a physics-based TDV compact model, that addresses the main TDV characterization challenges for accurate circuit reliability prediction at design time. The pillars o...

查看译文

关键词

Time-dependent variability,CMOS technology,MOSFET,RTN,aging,BTI,HCI degradation,characterization

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要