Recessed AlGaN/GaN Schottky Barrier Diodes With TiN and NiN Dual Anodes

High-performance AlGaN/GaN lateral Schottky barrier diodes (SBDs) with recess structure and dual metal nitride anodes were demonstrated. With high work-function and nonrecess structure, a NiN anode enhances the breakdown voltage (BV), while a TiN anode reduces the turn-on voltage ( ${V}_{ \mathrm{\scriptscriptstyle ON}}$ ) due to its low work-function and contact to the two-dimensional electron ga...