Hydrogen Behavior in Top Gate Amorphous In–Ga–Zn–O Device Fabrication Process During Gate Insulator Deposition and Gate Insulator Etching

The hydrogen behavior in the amorphous In–Ga–Zn–O (a-IGZO) thin-film layer according to the device process with top gate structure was quantitatively investigated. The hydrogen quantities in the a-IGZO thin-film layer with gate insulator (w/GI) and after GI dry-etching were increased by $3.40\times 10^{20}$ and $2.50\times 10^{\vphantom {D^{a}}20}$ /cm3, respectively, in comparison with without...