Epi-Gd₂O₃-MOSHEMT: A Potential Solution Toward Leveraging the Application of AlGaN/GaN/Si HEMT With Improved I ON / I OFF Operating at 473 K

In this article, we report the temperature-dependent transistor characteristic of Epi-Gd2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and compare its properties with that of AlGaN/GaN metal-Schottky high electron mobility transistor (HEMT) grown on 150 mm Si (111) substrate. Introducing an epitaxial single crystalline Gd2O3 between the metal gate and AlGaN bar...