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Changes in the lattice relaxation process for the number of Si layer inserted at the initial stage of GaInN growth on GaN

Haruka Yokoyama,Tomohiro Yamaguchi,Takuo Sasaki,Soichiro Ohno,Takanori Kiguchi,Hiroki Hirukawa,Seiji Fujikawa,Masamitu Takahasi,Takeyoshi Onuma,Tohru Honda

The Japan Society of Applied Physics（2021）

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si layer,lattice relaxation process,gainn growth,lattice relaxation
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