On the Raman Scattering, Infrared Absorption, and Luminescence Spectroscopy of Aluminum Nitride Doped with Beryllium
SEMICONDUCTORS(2021)
摘要
The effects of the high-temperature ( T = 1880°C) diffusion of beryllium ions and of electron irradiation on the optical properties of single-crystal aluminum nitride is studied. It is shown that the introduction of Be into AlN results in a change in the spectral characteristics of Raman scattering and infrared absorption. The analysis of Raman spectra and infrared adsorption spectra in crystals containing the Be impurity proves that this impurity is a getter of intrinsic defects responsible for the yellow color of the AlN crystal and for the broadening of lines in the spectra.
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关键词
aluminum nitride, doping, beryllium, getter, intrinsic defects, Raman scattering, photoluminescence, infrared absorption
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