Systematic Analysis of Reliability of Large Area 4H-SiC Charged Particle Detector under Harsh He Ion Irradiation

IEEE Transactions on Nuclear Science(2021)

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Abstract
Silicon carbide (SiC) detectors have great potential in nuclear fusion diagnosis and intense irradiation field measurement due to their outstanding irradiation resistance, high charge collection efficiency (CCE), and fast pulse response time. However, the irradiation resistance and the performance degradation of SiC detectors as a result of He ion irradiation remains unclear. In this article, SiC ...
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Key words
Detectors,Silicon carbide,Radiation effects,Ions,Energy resolution,Dark current,Degradation
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