Infrared properties of interstitial oxygen in homogeneous bulk Si1−XGeX crystals
Journal of Crystal Growth（2021）
Abstract
•Optical grade SiGe crystals produced by traveling liquidus zone method.•Correlation coefficient defined to convert oxygen concentration into infrared absorption intensity for Si0.7Ge0.3.•Mode-Grüneisen parameter γi of SiOiSi calculated using the IR peak shift with Ge concentration.
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Key words
A1. Impurity,A1. Point defect,A2. Growth from melt,B1. Germanium Silicon Alloy,B2. Semiconducting silicon compounds,B3. Infrared devices
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