Correlation Between Raman Spectra And Oxygen Content In Amorphous Vanadium Oxides

Amorphous vanadium oxide films were produced using a cathodic arc deposition technique. Varying oxygen pressure in a chamber during the film growth, we obtained the samples with different oxygen concentration. Elemental composition of our films was studied by Rutherford backscattering spectroscopy and energy dispersive X-ray analysis. Raman characterization of the samples showed the strong influence of oxide stoichiometry on the spectra: the main feature was attributed to stretching vibrations of vanadyl bonds and its position shifted from 879 to 937 cm-1 upon changing the V/O ratio from VO2 to V2O5. An explanation of such behavior and an empirical formula of this dependence were suggested.