GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
2020 IEEE International Electron Devices Meeting (IEDM)（2020）
Abstract
We report on the development of mm-wave GaN-on-Si AlGaN HEMTs integrated with a 3 level Cu damascene BEOL flow on 200mm Si <;111> wafers. Optimizations of the gate metal stack, contact resistance and gate length scaling to 110nm result in devices with a peak g
m
of 430 mS/mm and an f
MAX
of 135 GHz. While wafer warp was found to increase slightly through the processing of 3 levels of 1μm thick Cu metal, no significant deterioration was observed between devices measured at Metal 1 and Metal 3.
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Key words
mm-wave HEMT,gate metal stack,contact resistance,gate length,wafer warp,copper metal,CMOS compatible 3-level copper damascene,3 level copper damascene BEOL,mm-wave RF devices,size 1.0 mum,size 200.0 mm,size 110.0 nm,AlGaN,GaN-Si,Cu
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