JEDEC-Qualified Highly Reliable 22nm FD-SOI Embedded MRAM for Low-Power Industrial-Grade, and Extended Performance Towards Automotive-Grade-1 Applications
2020 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)(2020)
Abstract
We demonstrate highly reliable and mass-production ready 22nm FD-SOI 40Mb embedded-MRAM for industrial-grade (-40~125°C) applications. This technology having 5x solder reflows compatibility stack has passed JEDEC standard qualification (ECC-OFF) with total reliability failures below the product life-time bit-failure-rate requirement for industrial-grade. Using design-process co-optimization, we show the extended performance to meet -40~150°C product operation for Auto-Grade-1 applications with stable read performance, ~47% reduced read power, data retention of 20yrs (0.1 PPM), read disturb rate of <1 PPM for ~1M cycles with 500Oe field, 1M endurance cycles, and stand-by magnetic immunity (SMI) of ~1400Oe at 25°C and ~500Oe at 150°C (0.1 PPM). With magnetic shield-in package solution, we demonstrate ~4kOe SMI at 25°C for 48hrs of field exposure.
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Key words
extended performance,automotive-grade-1 applications,mass-production,JEDEC standard qualification,reliability failures,product life-time bit-failure-rate requirement,design-process co-optimization,product operation,Auto-Grade-1 applications,stable read performance,endurance cycles,JEDEC-qualified highly reliable FD-SOI,embedded MRAM,solder reflows,stand-by magnetic immunity,low-power industrial-grade,size 22.0 nm,temperature -40.0 degC to 150.0 degC,Si
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