Challenges and perspectives in the modeling of spin qubits

Y. M. Niquet,L. Hutin,B. Martinez Diaz, B. Venitucci,J. Li,V. Michal, G. Troncoso Fernandez-Bada, H. Jacquinot,A. Amisse,A. Apra,R. Ezzouch, N. Piot,E. Vincent, C. Yu,S. Zihlmann,B. Brun-Barriere,V. Schmitt,E. Dumur,R. Maurand,X. Jehl,M. Sanquer,B. Bertrand,N. Rambal, H. Niebojewski, T. Bedecarrats, M. Casse,E. Catapano,P. A. Mortemousque,C. Thomas,Y. Thonnart,G. Billiot,A. Morel,J. Charbonnier, L. Pallegoix,D. Niegemann, B. Klemt,M. Urdampilleta, V. El Homsy,M. Nurizzo,E. Chanrion,B. Jadot,C. Spence, V. Thiney, B. Paz,S. de Franceschi,M. Vinet,T. Meunier

international electron devices meeting（2020）

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摘要

We discuss the status, challenges and perspectives of \"Quantum CAD\" for the design and exploration of spin qubits. We highlight the similarities and differences with conventional TCAD for micro-electronics, and focus on design, physics and variability of silicon-on-insulator qubits as an illustration.

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关键词

TCAD,microelectronics,silicon-on-insulator qubits,quantum CAD,spin qubits design,spin qubits modeling

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