Buried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond

international electron devices meeting（2020）

Cited 8|Views16

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Abstract

This paper reports BPR/Via-to-BPR (VBPR) module development at 24nm fin pitch (FP) / 42nm contacted gate pitch (CPP), and W and Ru-BPR and Ru- Contact-to-Active (M0A)/VBPR resistance (R) & electromigration (EM). BPR dielectric barrier, BPR plug barrier, and fin reveal are optimized to enable BPR scaling. A self-aligned VBPR etch is also demonstrated by Q-ALE process. Ru-BPR meets BPR line R _target <; 50 Ω/μm at ~2× smaller aspect ratio than W-BPR thanks to its lower resistivity and thinner TiN liner. A good VBPR pre-clean prior to TiN liner & Ru deposition with W-BPR underneath, is found to be crucial to achieve low Ru-VBPR resistance. Calibrated TCAD simulations show Ru-VBPR with thin TiN liner meets VBPR R _target <; 75 Ω. W-BPR interface with Ru-VBPR shows robust electromigration for >1100 h at 5 MA/cm ² at 330 °C.

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Key words

metal assessment,contacted gate pitch,BPR dielectric barrier,BPR plug barrier,BPR scaling,VBPR etch,Ru-BPR,ruthenium deposition,low Ru-VBPR resistance,W-BPR interface,buried power rail scaling,BPR line,W-BPR,fin pitch,via-to-BPR module development,VBPR pre-clean,VBPR resistance,electromigration,self-aligned VBPR etch,Q-ALE process,aspect ratio,calibrated TCAD simulations,temperature 330.0 degC,size 3.0 nm,size 50.0 mum,Ru,TiN

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