Measurement of internal electrical field across InGaN quantum wells in GaN LEDs

An approach has been developed to measure the internal electrical field (Einternal) in InGaN quantum wells of GaN LEDs, which is vital for the internal quantum efficiency of GaN LEDs. Firstly, the initial forward voltages, Vf0, of the studied GaN LEDs were measured to be 3.1579 V with pulse mode at a current input of 350 mA. A linear relation between the forward voltage change and the stressing voltage was established in this work.