First Demonstration of heterogenous Complementary FETs utilizing Low-Temperature (200 °C) Hetero-Layers Bonding Technique (LT-HBT)
2020 IEEE International Electron Devices Meeting (IEDM)(2020)
摘要
For the first time, we demonstrate heterogeneous complementary FETs (hCFETs) with Ge and Si channels fabricated with a layer transfer technique. The 3D channel stacking integration particularly employs a low-temperature (200 °C) hetero-layers bonding technique (LT-HBT) realized by a surface activating chemical treatment at room temperature, enabling Ge channels bonded onto Si wafers. Furthermore, to obtain symmetric performance in n/p FETs, a multi-channel structure of two-channel Si and one-channel Ge is also implemented. Wafer-scale LT-HBT is demonstrated successfully, showing new opportunities for the ultimate device footprint scaling with heterogeneous integration.
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关键词
low-temperature hetero-layers bonding technique,layer transfer technique,multichannel structure,wafer-scale LT-HBT,heterogenous complementary FET,3D channel stacking integration,surface activating chemical treatment,ultimate device footprint scaling,temperature 200.0 degC,temperature 293.0 K to 298.0 K,Ge,Si
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