3D AND: A 3D Stackable Flash Memory Architecture to Realize High-Density and Fast-Read 3D NOR Flash and Storage-Class Memory

2020 IEEE International Electron Devices Meeting (IEDM)(2020)

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摘要
We demonstrate a 3D stackable AND-type Flash memory architecture for high-density and fast-read non-volatile memory solution. The device is based on a gate-all-around (GAA) macaroni thin-body device, with two vertical buried diffusion lines by N + doped poly plug to connect all memory cells in a parallel way to achieve 3D AND-type array. High sensing current >6uA enables fast Tread ~100ns like NOR Flash, while the structure can enable hundreds of stacked layers eventually. Large transistor ON/OFF ratio of >5 orders, >5V Vt memory window, 100K Endurance, read-disturb free property, and small RTN are demonstrated in our 3D architecture using the BE-MANOS charge-trapping device. This architecture is promising to realize high-density 3D NOR Flash and future storage-class memory (SCM).
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关键词
3D stackable flash memory architecture,storage-class memory,gate-all-around macaroni thin-body device,vertical buried diffusion lines,doped poly plug,memory cells,memory window,high-density 3D,high-density 3D NOR flash,fast-read nonvolatile memory solution,3D stackable AND-type flash memory architecture,3D AND-type array,read-disturb free property,small RTN,BE-MANOS charge-trapping device
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