Room Temperature Heterodyne Detection up to 70GHz With Antenna-Coupled Quantum-Well Photodetectors Operating at 10μm

2020 45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)(2020)

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摘要
III-V semiconductor mid-infrared photodetectors based on intersubband transitions hold a great potential for ultra-high-speed operation up to several hundreds of GHz. In this work we exploit a ~350nm-thick GaAs/Al 0.2 Ga 0.8 As multi-quantum-well heterostructure to demonstrate heterodyne detection at λ ~ 10μm with a nearly flat frequency response up to 70GHz at room temperature, solely limited by the measurement system bandwidth. To the best of our knowledge this is the broadest RF-bandwidth reported to date for a quantum-well mid-infrared photodetector. Responsivities of 0.15A/W and 1.5A/W are obtained at 300K and 77K respectively. To allow ultrafast operation and illumination at normal incidence, the detector consists of a 50Ω coplanar waveguide, monolithically integrated with a 2D-array of patch antennas, electrically interconnected by suspended wires. With this device architecture we obtain a parasitic capacitance of ~ 30fF, corresponding to the static capacitance of the antennas, yielding a RC-limited 3dB cutoff frequency >150GHz at 300K, extracted with a small-signal equivalent circuit model. Using this model, we quantitively reproduce the detector frequency response and find intrinsic roll-off time constants as low as 1ps at room temperature.
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关键词
heterodyne detection,intersubband transitions,ultrahigh-speed operation,multiquantum-well heterostructure,flat frequency response,measurement system bandwidth,RF bandwidth,ultrafast operation,illumination,coplanar waveguide,patch antennas,RC-limited cutoff frequency,III-V semiconductor midinfrared photodetectors,suspended wires,antenna-coupled quantum-well photodetectors,parasitic capacitance,small-signal equivalent circuit model,static capacitance,temperature 300.0 K,temperature 293.0 K to 298.0 K,time 1.0 ps,temperature 77.0 K,frequency 70.0 GHz,size 10.0 mum,resistance 50 ohm,GaAs-Al0.2Ga0.8
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