A Novel Hybrid High-Speed and Low Power Antiferroelectric HSO Boosted Charge Trap Memory for High-Density Storage

T. Ali,K. Mertens, R. Olivo,M. Rudolph, S. Oehler, K. Kühnel,D. Lehninger,F. Müller,M. Lederer,R. Hoffmann, P. Schramm,K. Biedermann,Alireza M. Kia,J. Metzger,R. Binder,M. Czernohorsky,T. Kämpfe,J. Müller,K. Seidel,J. Van Houdt,L. M. Eng

2020 IEEE International Electron Devices Meeting (IEDM)（2020）

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摘要

We report on antiferroelectric (AFE) hybrid charge trap (CT) memory with amplified tunnel oxide field via dynamic AFE hysteresis dipole switching. Memory window (4.5V), switching speed (<; 1μs), 10 years retention, and 10 ⁵ endurance are reported. The HSO/HZO with tailored (FE,AFE) hysteresis are explored for low power and high-speed-boosted CT memory.

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关键词

low power antiferroelectric HSO boosted charge trap memory,high-density storage,antiferroelectric hybrid charge trap memory,amplified tunnel oxide field,dynamic AFE hysteresis dipole,memory window,high-speed-boosted CT memory,hybrid high-speed antiferroelectric HSO boosted charge trap memory,voltage 4.5 V,time 1.0 mus,time 10.0 year

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