Effect of Plasma Amount on the Current Filaments Evolving Pattern within High-Voltage Power Diodes During Overcurrent Reverse Recovery

Simulation study was carried out to show how the accumulated plasma amount within a 3.3-kV silicon high-voltage fast recovery diode can influence the pattern of plasma clearance and current filamentation on both anode and cathode sides during a 2-time overcurrent reverse recovery. It is found that a lower plasma quantity helps to control the homogeneity of plasma clearance, weaken the activity or even suppress the occurrence of cathode-side filaments, and thus lower the local temperate rise and enhance the ruggedness of the device.