Evidence of Interface Trap Build-Up in Irradiated 14-nm Bulk FinFET Technologies

Total ionizing dose response of 14-nm bulk-Si FinFETs has been studied with a specially designed test chip. The radiation testing shows evidence of interface trap build-up on 14-nm Bulk FinFET technologies. These defects created in the isolation layer give rise to a new radiation-induced leakage path which might lead to a reliability issue in CMOS technologies at or below the 14-nm node. TCAD simulations are performed and an analytical model for TID-induced leakage current is presented to support analysis of the identified TID mechanism. TCAD simulation and analytical model results are consistent with the experimental data.