Frequency Modulated C-V Characteristics Shift in Double-layer High-k Gate Stack MIS Devices

Andrzej Mazurak,Robert Mroczynski,Bogdan Majkusiak

2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)（2020）

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摘要

MIS structures with a double-layer gate stack were fabricated. The measurements revealed an anomalous frequency-dependent shift of the C-V characteristics. The effect is presented and discussed in terms of the flat-band voltage shift and the oxide effective charge modulation.

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关键词

MIS,high-k,C-V,admittance

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