Corrections to “1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices”

Markus Müller,Philippe Dollfus,Michael Schröter

IEEE Transactions on Electron Devices（2022）

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摘要

In the above article [1] , the numerator and denominator on the right-hand side of (12) should be interchanged to the following:

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关键词

III–V semiconductors,charge carrier transport,drift-diffusion (DD),heterojunction bipolar transistor (HBT),negative differential mobility (NDM),technology computer-aided design (TCAD)

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