Stochastic And Deterministic Modeling Frameworks For Time Kinetics Of Gate Insulator Traps During And After Hot Carrier Stress In Mosfets

A stochastic Reaction-Diffusion-Drift (RDD) model framework is proposed for trap time kinetics under Hot Carrier Degradation (HCD) stress and post-stress conditions. Consistency of the 3-D stochastic RDD, 3-D TCAD incorporated deterministic RDD and an "equivalent" 1-D deterministic RDD frameworks is shown. Measured HCD kinetics is decoupled into contributions by pure HCD and Bias Temperature Instability (BTI). The pure HCD time kinetics during and after stress is modeled using the above frameworks. Lack of recovery for the pure HCD component after stress is explained.