Effect of High Temperature on Recovery of Hot Carrier Degradation of scaled nMOSFETs in DRAM

Recovery mechanism of hot carrier degradation of nMOSFETs in DRAM under a high temperature environment was investigated. Hot carrier injection was tested under the high temperature (125°C), and the devices were stored under the room temperature to high temperature environment (25°C~280°C). The device stored under the room temperature showed non-recoverable damages. On the other hand, the device st...