Reliability of STT-MRAM for various embedded applications
2021 IEEE International Reliability Physics Symposium (IRPS)(2021)
摘要
Owing to tunability of MTJ stack characteristics based on perpendicular magnetic anisotropy control via sophisticated magnetic material engineering, STT-MRAM can meet a wide range of product specifications for various applications: 1) flash-type applications such as microcontroller and AI inferencing device and 2) SRAM-type applications such as frame buffer memory. However each application has different reliability challenges. In this paper, we discuss the reliability requirements for Flash-type and SRAM-type STT-MRAM, verifying superb reliability of highly tunable STT-MRAM technology.
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关键词
STT-MRAM,Perpendicular Magnetic Anisotropy,Tunalibility,Flash-type,SRAM-type,reliability
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