Composition Segregation of Ge-Rich GST and Its Effect on Reliability

Yung-Huei Lee,P.J. Liao,Vincent Hou, Dawei Heh,Chih-Hung Nien, Wen-Hsien Kuo, Gary T. Chen, Shao-Ming Yu,Yu-Sheng Chen,Jau-Yi Wu,Xinyu Bao,Carlos H. Diaz

2021 IEEE International Reliability Physics Symposium (IRPS)（2021）

引用 6|浏览5

暂无评分

摘要

PCRAM SET/RESET cycling caused GST component segregation and void formation, thus leading to cell failure. We compared electrical cell characteristics and failure analysis of GST with various Ge compositions to understand the GST material segregation and how they may affect the PCM cell reliability. Ge-rich GST424 and GST612 films have an inferior GST segregation uniformity compared to Ge2Sb2Te5 (...

查看译文

关键词

Phase change materials,Annealing,Systematics,Thermal resistance,Films,Failure analysis,Programming

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要