Phase Transition Material-Assisted Low-Power SRAM Design

The threshold switching properties of the phase transition material (PTM) can be exploited to realize a heterogeneous static random access memory (SRAM) bitcell, which can obviate the need for assist techniques. This unique PTM-SRAM bitcell is designed by placing the PTM in series with the gate of pull-down nMOS transistors. The large insulating state resistance of the PTM device blocks the propag...