Investigation of V th Distribution Tails of Ground-Select-Line Cells and Edge Dummy Cells in a 3-D NAND Flash Memory
IEEE Transactions on Electron Devices(2021)
Abstract
The threshold voltage ( ${V}$ th) distributions of ground-select-line (GSL) cells and edge dummy (DMY0) cells in a 3-D NAND flash memory are investigated. We characterize the ${V}$ th distributions in 3-D NAND flash samples with different fabrication processes and bitline voltages. Large DMY0 and GSL ${V}$ th distribution tails are observed in certain fabrication process and operation voltage co...
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Key words
Logic gates,Implants,Silicon,Fabrication,Electric potential,Solid modeling,Semiconductor process modeling
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