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An over 220-GHz-Bandwidth Distributed Active Power Combiner in 250-nm InP DHBT

Teruo Jyo,Munehiko Nagatani,Minoru Ida,Miwa Mutoh,Hitoshi Wakita,Naoki Terao,Hideyuki Nosaka

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)（2020）

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Abstract
A distributed active power combiner (DAPC) was designed and fabricated in 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. A new DAPC configuration by using two separated distributed amplifiers with a distributed resistive combiner (DRC) is proposed to extend the bandwidth and reduce input crosstalk. The fabricated DAPC achieved a gain of 5 dB with a bandwidth of over 220 GHz, and an input crosstalk of less than -32 dB up to 67 GHz.
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Key words
distributed active power combiner,combiner,distributed amplifier,InP DHBT
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